PLANAR SURFACE BURIED-HETEROSTRUCTURE INGAASP/INP LASERS WITH HYDRIDE VPE-GROWN FE-DOPED HIGHLY RESISTIVE CURRENT-BLOCKING LAYERS

被引：16
作者：
SUGOU, S
KATO, Y
NISHIMOTO, H
KASAHARA, K
机构：
来源：
ELECTRONICS LETTERS | 1986年 / 22卷 / 23期
关键词：
SEMICONDUCTING INDIUM COMPOUNDS - Growth;
D O I：
10.1049/el:19860832
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The fabrication and lasing characteristics for planar surface buried-heterostructure InGaAsP/InP lasers with highly resistive current-blocking layers are reported. Embedding growth was successfully performed by Fe-doping hydride VPE. Single transverse mode operation has been realized in lasers with a narrow active region, without any nonradiative recombination increase, due to an Fe-associated deep level. High-frequency response up to 10 GHz was also demonstrated.
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页码：1214 / 1215
页数：2
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