ULTRA-HIGH-RESOLUTION NEGATIVE E-BEAM RESIST - ALF3

被引：3

作者：

BORSJE, HR

JAEGER, HM

RADELAAR, S

机构：

[1] Delft Institute of Microelectronics and Submicron Technology (DIMES), NL-2600 GA Delft

来源：

MICROELECTRONIC ENGINEERING | 1992年 / 17卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(92)90064-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated the feasibility of using AlF3 as a negative resist and etch mask for nanoscale device fabrication in conventional e-beam writers. Isolated features down to 15 nm have been made as well as square arrays of 20 nm dots-and-spaces.

引用

页码：311 / 314

页数：4

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