IMPURITY BAND CONDUCTION IN PHOSPHORUS DOPED SILICON

被引：2

作者：

ROUX, JF

SCHUTTLER, R

机构：

来源：

JOURNAL DE PHYSIQUE | 1971年 / 32卷 / 2-3期

关键词：

D O I：

10.1051/jphys:01971003202-3017700

中图分类号：

学科分类号：

摘要：

引用

页码：177 / +

页数：1

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