THERMAL-OXIDATION RATE OF A SI3N4 FILM AND ITS MASKING EFFECT AGAINST OXIDATION OF SILICON

被引：52

作者：

ENOMOTO, T ^{[1
]}

ANDO, R ^{[1
]}

MORITA, H ^{[1
]}

NAKAYAMA, H ^{[1
]}

机构：

[1] MITSUBISHI ELECT CORP,KITA ITAMI WORKS,ITAMI,HYOGO 664,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1978年 / 17卷 / 06期

关键词：

D O I：

10.1143/JJAP.17.1049

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1049 / 1058

页数：10

共 12 条

[1]

APPELS JA, 1970, PHILIPS RES REP, V25, P118

[2]

APPELS JA, 1971, PHILIPS RES REP, V26, P157

[3] PREPARATION AND PROPERTIES OF AMORPHOUS SILICON NITRIDE FILMS [J].

CHU, TL ;

LEE, CH ;

GRUBER, GA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (07) :717-&

[4] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J].

DEAL, BE ;

GROVE, AS .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3770-&

[5] PROPERTIES OF ANODIC OXIDE-FILMS FORMED IN ANODIZATION OF SILICON-NITRIDE [J].

DELLOCA, CJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (09) :1225-1230

[6] CONVERSION OF SILICON NITRIDE INTO SILICON DIOXIDE THROUGH INFLUENCE OF OXYGEN [J].

FRANZ, I ;

LANGHEINRICH, W .

SOLID-STATE ELECTRONICS, 1971, 14 (06) :499-+

[7]

MAEDA K, 1977, DENKI KAGAKU, V45, P304

[8]

NAKAYAMA M, 1968, MITSUBISHI DENKI GIH, V42, P1600

[9] SURFACE OXIDATION OF SILICON-NITRIDE FILMS [J].

RAIDER, SI ;

FLITSCH, R ;

ABOAF, JA ;

PLISKIN, WA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (04) :560-565

[10] A NITRIC OXIDE PROCESS FOR DEPOSITION OF SILICA FILMS [J].

RAND, MJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) :274-&

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