2-DIMENSIONAL LATTICE SCATTERING MOBILITY IN A SEMICONDUCTOR INVERSION LAYER

被引：112

作者：

KAWAJI, S

机构：

[1] Department of Physics, Gakushuin University, Mejiro, Toshima-ku, Tokyo

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1969年 / 27卷 / 04期

关键词：

D O I：

10.1143/JPSJ.27.906

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A theory of two-dimensional lattice scattering for electrons or holes in a semiconductor inversion layer is described. The theory can explain the electron mobility in Si inversion layers at room temperature taking the two-dimensional deformation potential constant as 23±1 eV. © 1969, THE PHYSICAL SOCIETY OF JAPAN. All rights reserved.

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页码：906 / &

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