A THEORY OF 1/F NOISE AT SEMICONDUCTOR SURFACES

被引：26
作者：
JANTSCH, O
机构：
[1] Research Laboratory, Siemens AG, Erlangen
来源：
SOLID-STATE ELECTRONICS | 1968年 / 11卷 / 02期
关键词：
D O I：
10.1016/0038-1101(68)90088-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The 1 f noise at semiconductor surfaces can be explained by the model of slow surface states presented previously. According to this theory, the 1 f noise is produced by a modulation of surface recombination caused in the following manner. The chemisorbed molecules dissociate from their active centres and diffuse in the interface of the surface by Brownian motion until they are bonded again. During the removal of a chemisorbed molecule from an active centre, a chemical bond is interrupted and surface recombination is thus modulated. © 1968.
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页码：267 / +
页数：1
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