HIGH-VOLTAGE 4H-SIC SCHOTTKY-BARRIER DIODES

被引：92
|
作者：
RAGHUNATHAN, R
ALOK, D
BALIGA, BJ
机构：
[1] Power Semiconductor Research Center, North Carolina State University
来源：
IEEE ELECTRON DEVICE LETTERS | 1995年 / 16卷 / 06期
关键词：
D O I：
10.1109/55.790716
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Characteristics of 4H-SiC Schottky barrier diodes with breakdown voltages upto 1000 V are reported for the first time. The diodes showed excellent forward I-V characteristics, with a forward voltage drop of 1.06 V at an on-state current density of 100 A/cm(2). The specific on-resistance for these diodes was found to be low(2 x 10(-3) Omega-cm(2) at room temperature) and showed a T-1.6 variation with temperature; Titanium Schottky barrier height was determined to be 0.99 eV independent of the temperature, The breakdown voltage of the diodes was found to decrease with temperature.
引用
收藏
页码：226 / 227
页数：2
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