INVESTIGATION OF INTRINSIC UNOCCUPIED SURFACE-STATES AT GAAS(110) BY ISOCHROMAT SPECTROSCOPY

被引：58

作者：

DOSE, V

GOSSMANN, HJ

STRAUB, D

机构：

来源：

PHYSICAL REVIEW LETTERS | 1981年 / 47卷 / 08期

关键词：

D O I：

10.1103/PhysRevLett.47.608

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：608 / 610

页数：3

共 13 条

[1] SURFACE-STRUCTURE AND ORBITAL SYMMETRIES OF (110) SURFACE-STATES OF GAAS [J].

CHADI, DJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02) :631-636

[2]

CHADI DJ, COMMUNICATION

[3] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].

CHELIKOWSKY, JR ;

COHEN, ML .

PHYSICAL REVIEW B, 1976, 14 (02) :556-582

[4] ISOCHROMAT SPECTROSCOPY USING SXAPS EQUIPMENT [J].

CONRAD, M ;

DOSE, V ;

FAUSTER, T ;

SCHEIDT, H .

APPLIED PHYSICS, 1979, 20 (01) :37-40

[5] VUV ISOCHROMAT SPECTROSCOPY [J].

DOSE, V .

APPLIED PHYSICS, 1977, 14 (01) :117-118

[6] PHOTOEMISSION PARTIAL YIELD MEASUREMENTS OF UNOCCUPIED INTRINSIC SURFACE STATES FOR GE(111) AND GAAS(110) [J].

EASTMAN, DE ;

FREEOUF, JL .

PHYSICAL REVIEW LETTERS, 1974, 33 (27) :1601-1605

[7]

EASTMAN DE, 1980, PHYS REV LETT, V45, P656, DOI 10.1103/PhysRevLett.45.656

[8] EVIDENCE FOR SUBSURFACE ATOMIC DISPLACEMENTS OF GAAS(110) SURFACE FROM LEED/CMTA ANALYSIS [J].

KAHN, A ;

CISNEROS, G ;

BONN, M ;

MARK, P ;

DUKE, CB .

SURFACE SCIENCE, 1978, 71 (02) :387-396

[9] GAAS SURFACE-STATES OBSERVED BY X-RAY PHOTOEMISSION [J].

LUDEKE, R ;

LEY, L .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1300-1301

[10] NEW PROBE FOR UNOCCUPIED BANDS AT SURFACES [J].

PENDRY, JB .

PHYSICAL REVIEW LETTERS, 1980, 45 (16) :1356-1358

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