PHOTOCHEMICAL ETCHING OF SILICON USING MONOCHROMATIC SYNCHROTRON-RADIATION

被引：3

作者：

KITAMURA, O ^{[1
]}

TERAKADO, S ^{[1
]}

GOTO, T ^{[1
]}

SUZUKI, S ^{[1
]}

TANAKA, K ^{[1
]}

机构：

[1] NATL LAB HIGH ENERGY PHYS,PHOTON FACTORY,TSUKUBA,IBARAKI 305,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 02期

关键词：

D O I：

10.1063/1.112668

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photochemical etching of single-crystal silicon was studied using monochromatic synchrotron radiation (SR) under the existence of reactive species produced by 2.45 GHz microwave discharge in a mixture of SF6 and Ar. The increases of the etched depth by irradiation of 50, 85, and 130 eV SR were investigated and compared with the total electron yield spectra. The ratios of the increment were found to closely agree with the ratios of the total electron yield of Si fully exposed to reactive species. This suggests that the increments are related to the light absorption of Si having reactive species adsorbed on its surface.

引用

页码：192 / 194

页数：3

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