TRAPPING LEVELS IN ANTHRACENE CRYSTALS BY THERMALLY STIMULATED CURRENTS

被引：11

作者：

GAROFANO, T ^{[1
]}

MORELLI, S ^{[1
]}

机构：

[1] UNIV MODENA,IST FIS,MODENA,ITALY

来源：

NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-GENERAL PHYSICS RELATIVITY ASTRONOMY AND MATHEMATICAL PHYSICS AND METHODS | 1973年 / B 13卷 / 01期

关键词：

D O I：

10.1007/BF02726703

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：174 / 184

页数：11

共 50 条

[1] ON NATURE OF TRAPPING LEVELS IN ANTHRACENE CRYSTALS FROM STUDY OF THERMALLY STIMULATED CURRENTS
APRILESI, G
GAROFANO, T
NAVA, F
SANTANGELO, M
NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B, 1971, B 1 (02): : 85 - +
[2] STERMALLY STIMULATED CURRENTS + CARRIER TRAPPING IN ANTHRACENE CRYSTALS
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SCHNEIDER, WG
JOURNAL OF CHEMICAL PHYSICS, 1964, 40 (10): : 2937 - +
[3] FURTHER INVESTIGATION OF THERMALLY STIMULATED CURRENTS IN ANTHRACENE-CRYSTALS
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CORAZZARI, T
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[4] INVESTIGATION OF TRAPPING LEVELS IN INHOMOGENEOUS SYSTEMS BY METHOD OF THERMALLY STIMULATED CURRENTS
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[5] THERMALLY STIMULATED CURRENTS IN AMORPHOUS SELENIUM - RELATIONSHIP TO TRAPPING LEVELS AND THE NONCRYSTALLINE STATE
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JOURNAL OF APPLIED PHYSICS, 1981, 52 (10) : 6214 - 6217
[6] Thermally stimulated currents in sillenite crystals
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INORGANIC MATERIALS, 2002, 38 (03) : 236 - 244
[7] Thermally Stimulated Currents in Sillenite Crystals
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[8] HIGH-FIELD ISOTHERMAL CURRENTS AND THERMALLY STIMULATED CURRENTS IN INSULATORS HAVING DISCRETE TRAPPING LEVELS
SIMMONS, JG
TAYLOR, GW
PHYSICAL REVIEW B, 1972, 5 (04): : 1619 - &
[9] Trapping center parameters in TlInSSe layered single crystals bit thermally stimulated currents measurements
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JOURNAL OF ALLOYS AND COMPOUNDS, 2009, 485 (1-2) : 41 - 45
[10] THERMALLY STIMULATED CURRENTS IN MOLECULAR-CRYSTALS
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INTERNATIONAL JOURNAL OF ELECTRONICS, 1994, 77 (03) : 343 - 345

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