STABILITY OF 300-K CONTINUOUS OPERATION OF P-N ALXGA1-XAS-GAAS QUANTUM-WELL LASERS GROWN ON SI

被引：37

作者：

DEPPE, DG

NAM, DW

HOLONYAK, N

HSIEH, KC

MATYI, RJ

SHICHIJO, H

EPLER, JE

CHUNG, HF

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 16期

关键词：

D O I：

10.1063/1.98702

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1271 / 1273

页数：3

共 7 条

[1] ROOM-TEMPERATURE CONTINUOUS OPERATION OF P-N ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURE LASERS GROWN ON SI [J].

DEPPE, DG ;

HOLONYAK, N ;

NAM, DW ;

HSIEH, KC ;

JACKSON, GS ;

MATYI, RJ ;

SHICHIJO, H ;

EPLER, JE ;

CHUNG, HF .

APPLIED PHYSICS LETTERS, 1987, 51 (09) :637-639

[2]

DUPUIS RD, 1979, 7TH P INT S GAAS REL, P1

[3] CONTINUOUS (300 K) PHOTOPUMPED LASER OPERATION OF ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURES GROWN ON STRAINED-LAYER GAAS ON SI [J].

KALISKI, RW ;

HOLONYAK, N ;

HSIEH, KC ;

NAM, DW ;

LEE, JW ;

SHICHIJO, H ;

BURNHAM, RD ;

EPLER, JE ;

CHUNG, HF .

APPLIED PHYSICS LETTERS, 1987, 50 (13) :836-838

[4]

Lee J. W., 1987, Gallium Arsenide and Related Compounds 1986. Proceedings of the Thirteenth International Symposium, P111

[5] METALORGANIC CHEMICAL VAPOR-DEPOSITION OF III-V SEMICONDUCTORS [J].

LUDOWISE, MJ .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (08) :R31-R55

[6] STABLE CONTINUOUS ROOM-TEMPERATURE LASER OPERATION OF ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURES GROWN ON SI [J].

NAM, DW ;

HOLONYAK, N ;

HSIEH, KC ;

KALISKI, RW ;

LEE, JW ;

SHICHIJO, H ;

EPLER, JE ;

BURNHAM, RD ;

PAOLI, TL .

APPLIED PHYSICS LETTERS, 1987, 51 (01) :39-41

[7] DEGRADATION OF GAAS-LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION ON SI SUBSTRATES [J].

VANDERZIEL, JP ;

DUPUIS, RD ;

LOGAN, RA ;

PINZONE, CJ .

APPLIED PHYSICS LETTERS, 1987, 51 (02) :89-91

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