ELECTRICAL CHARACTERIZATION OF HEAVILY DOPED POLYCRYSTALLINE SILICON FOR HIGH-FREQUENCY BIPOLAR-TRANSISTOR APPLICATION

被引：11
|
作者：
KIM, DM [1 ]
FENG, Q [1 ]
BICKFORD, CU [1 ]
PARK, HK [1 ]
机构：
[1] TEKTRONIX INC, TEKTRONIX LAB, BEAVERTON, OR 97077 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 08期
关键词：
D O I：
10.1109/T-ED.1987.23150
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1774 / 1780
页数：7
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