COMPARISON OF SOME PHYSICAL PROPERTIES OF RESISTANCE - HEAT AND ELECTRON-GUN EVAPORATED SIO FILMS

被引：5

作者：

SHIMODA, RY

HSIEH, EJ

MAYEDA, K

机构：

[1] Lawrence Radiation Laboratory, University of California, Livermore, CA

来源：

VACUUM | 1968年 / 18卷 / 05期

关键词：

D O I：

10.1016/0042-207X(68)90152-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A systematic investigation has been conducted to compare the SiO films evaporated by electron gun and resistance-heat under similar conditions. The physical properties compared are the relative density, ratio of (SiO+Si) to SiOx and dielectric constant. The results show that the electron-gun evaporated films are approximately 1.25±0.05 greater in density and 1.2 times higher in dielectric value than the resistance-heated films, although both films have the same composition of (SiO+Si) per volume. This indicates that the higher dielectric constant of the electron-gun evaporated films is related to the higher density of the electron-gun process. © 1968.

引用

页码：269 / &

共 10 条

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