BASE WIDENING INTO EMITTER REGION OF AN N+NPN BIPOLAR-TRANSISTOR

[1] CARRIER MOBILITIES IN SILICON EMPIRICALLY RELATED TO DOPING AND FIELD [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (12): : 2192 - +

[2] ALTERNATIVE WAY FOR NUMERICAL STEADY-STATE ANALYSIS OF FORWARD-BIASED P-N-JUNCTION DEVICES [J]. ELECTRONICS LETTERS, 1975, 11 (19) : 465 - 466

[3] YAGI H, 1974, DEC INT EL DEV M WAS, P262

[1] CARRIER MOBILITIES IN SILICON EMPIRICALLY RELATED TO DOPING AND FIELD [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (12): : 2192 - +

[2] ALTERNATIVE WAY FOR NUMERICAL STEADY-STATE ANALYSIS OF FORWARD-BIASED P-N-JUNCTION DEVICES [J]. ELECTRONICS LETTERS, 1975, 11 (19) : 465 - 466

[3] YAGI H, 1974, DEC INT EL DEV M WAS, P262