ELECTROLUMINESCENCE IN FORWARD-BIASED ZNSE DIODES

被引：19

作者：

WATANABE, H ^{[1
]}

CHIKAMURA, T ^{[1
]}

WADA, M ^{[1
]}

机构：

[1] TOHOKU UNIV, FAC ENGN, DEPT ELECTR ENGN, SENDAI, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1974年 / 13卷 / 02期

关键词：

D O I：

10.1143/JJAP.13.357

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：357 / 358

页数：2

共 8 条

[1] INJECTION ELECTROLUMINESCENCE IN ZNS + ZNSE [J].

AVEN, M ;

CUSANO, DA .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (3P1) :606-&

[2]

CHIKAMURA T, 1971, RECORD ELECTRICAL CO, V40, P100

[3] DC ELECTROLUMINESCENCE IN HOT-PRESSED ZNSE DIODES [J].

CHIN, TN ;

BOYER, LA .

SOLID-STATE ELECTRONICS, 1973, 16 (02) :143-146

[4]

HAMANO T, 1973, MAR ANN M JAP SOC AP

[5] ZNSE ELECTROLUMINESCENT DEVICE EXHIBITING SWITCHING AND MEMORY [J].

LIVINGSTONE, AW ;

ALLEN, JW .

APPLIED PHYSICS LETTERS, 1972, 20 (06) :207-+

[6] ELECTROLUMINESCENCE IN FORWARD-BIASED ZINC SELENIDE SCHOTTKY DIODES [J].

LIVINGSTONE, AW ;

TURVEY, K ;

ALLEN, JW .

SOLID-STATE ELECTRONICS, 1973, 16 (03) :351-356

[7] TYPE CONVERSION AND P-N JUNCTION FORMATION IN LITHIUM-ION-IMPLANTED ZNSE [J].

PARK, YS ;

CHUNG, CH .

APPLIED PHYSICS LETTERS, 1971, 18 (03) :99-&

[8] YELLOW LIGHT-EMITTING ZNSE DIODE [J].

PARK, YS ;

SHIN, BK ;

GEESNER, CR .

APPLIED PHYSICS LETTERS, 1972, 21 (12) :567-&

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