RADIATION ANNEALING OF GAAS IMPLANTED WITH SI

被引：52

作者：

ARAI, M

NISHIYAMA, K

WATANABE, N

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 02期

关键词：

D O I：

10.1143/JJAP.20.L124

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L124 / L126

页数：3

共 11 条

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[3]

HUBER AM, 1979, APPL PHYS LETT, V34, P858, DOI 10.1063/1.90700

[4] REDISTRIBUTION OF CR IN CAPLESS-ANNEALED GAAS UNDER ARSENIC PRESSURE [J].

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[5] SUPPRESSION OF THERMAL-CONVERSION IN CR-DOPED SEMI-INSULATING GAAS [J].

KASAHARA, J ;

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WATANABE, N .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (12) :8229-8231

[6] DOUBLE-LAYERED ENCAPSULANT FOR ANNEALING ION-IMPLANTED GAAS UP TO 1100DEGREESC [J].

LIDOW, A ;

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MAGEE, T .

APPLIED PHYSICS LETTERS, 1977, 31 (03) :158-161

[7]

MIYAZAKI T, 1975, ION IMPLANTATION SEM, P41

[8] RADIATION ANNEALING OF BORON-IMPLANTED SILICON WITH A HALOGEN LAMP [J].

NISHIYAMA, K ;

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JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (10) :L563-L566

[9]

SEALY BJ, 1979, GALLUM ARSENIDE RELA, P476

[10] CHROMIUM REDISTRIBUTION DURING THERMAL ANNEALING OF SEMI-INSULATING GAAS AS A FUNCTION OF ENCAPSULANT AND IMPLANT FLUENCE [J].

VASUDEV, PK ;

WILSON, RG ;

EVANS, CA .

APPLIED PHYSICS LETTERS, 1980, 36 (10) :837-840

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