VERY-LOW-FREQUENCY RESONANCE OF MOSFET AMPLIFIER PARAMETERS

Extensive investigations of frequency dependent MOSFET amplifier parameters are performed. For the first time gigantic very-low-frequency resonances are found with the bound values of simple series resonant circuit C0 = 5.216 x 10(-7) F; L0 = 7.407 x 10(-2) H and omega0 = 5088 rad/s-1. Analytical continuation of the MOSFET experimentally determined characteristic impedances rho(L(d)) have given the wave vacuum value rho0 = square-root mu0/epsilon0 at the surface inductance zero value. Since the reactive MOSFET parameters L(d) ad C(d) thicknesses were about the same order as the Compton wavelength of electron, the high values of L0 and C0 could be explained by the quantum properties of the Si-SiO2 interface.