MULTIMESA VERSUS ANNULAR CONSTRUCTION FOR HIGH AVERAGE POWER IN SEMICONDUCTOR DEVICES

被引：16
作者：
FREY, J
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1972年 / ED19卷 / 08期
关键词：
D O I：
10.1109/T-ED.1972.17528
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：981 / &
相关论文
共 6 条
[1]  
ERDELYI A, 1954, TABLES INTEGRAL TRAN, V2, P20
[2]   TEMPERATURE AND CURRENT DISTRIBUTION IN AN AVALANCHING P-N JUNCTION [J].
GIBBONS, G ;
MISAWA, T .
SOLID-STATE ELECTRONICS, 1968, 11 (11) :1007-&
[3]   SPREADING RESISTANCE IN CYLINDRICAL SEMICONDUCTOR DEVICES [J].
KENNEDY, DP .
JOURNAL OF APPLIED PHYSICS, 1960, 31 (08) :1490-1497
[4]   RING-GEOMETRY IMPATT OSCILLATOR DIODES [J].
MARINACC.LP .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (09) :1588-+
[5]  
RILEY TJ, 1968, I ELEC ENG S GALLIUM
[6]  
YU SP, 1971, ELECTRON LETT, V7
1