RADIATION-INDUCED INTERFACE-STATE GENERATION IN REOXIDIZED NITRIDED SIO2

被引：7

作者：

RAO, VR ^{[1
]}

VASI, J ^{[1
]}

机构：

[1] INDIAN INST TECHNOL,DEPT ELECT ENGN,BOMBAY 400076,INDIA

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 02期

关键词：

D O I：

10.1063/1.350390

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Reoxidized nitrided oxide is compared with nitrided oxides and dry SiO2 for radiation-induced interface-state generation (DELTA-D(itm)) and midgap voltage shifts (DELTA-V(mg)). The suppression of DELTA-D(itm) observed with heavy nitridation or reoxidation is explained in terms of the trapped-hole recombination model together with the shifting of the location of the trapped positive charge away from the Si interface. This model can also explain the effect of nitrogen annealing on nitrided oxides.

引用

页码：1029 / 1031

页数：3

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