THERMALLY ASSISTED FLASH ANNEALING OF SILICON AND GERMANIUM

被引：40

作者：

COHEN, RL

WILLIAMS, JS

FELDMAN, LC

WEST, KW

机构：

来源：

APPLIED PHYSICS LETTERS | 1978年 / 33卷 / 08期

关键词：

D O I：

10.1063/1.90528

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：751 / 753

页数：3

共 11 条

[1]

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[2]

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[3]

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[4]

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EVANS, CA .

APPLIED PHYSICS LETTERS, 1978, 32 (05) :276-278

[6]

KACHURIN GA, 1976, SOV PHYS SEMICOND, V9, P946

[7]

KLIMENKO AG, 1976, SOV J QUANTUM ELECTR, V5, P1289

[8]

Morgan D.V., 1973, CHANNELING THEORY OB

[9] INTENSE RAPID HEATING WITH FLASH DISCHARGE LAMPS [J].

NELSON, LS .

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[10] SOLID-PHASE EPITAXY OF IMPLANTED SILICON BY CW AR ION LASER IRRADIATION [J].

WILLIAMS, JS ;

BROWN, WL ;

LEAMY, HJ ;

POATE, JM ;

RODGERS, JW ;

ROUSSEAU, D ;

ROZGONYI, GA ;

SHELNUTT, JA ;

SHENG, TT .

APPLIED PHYSICS LETTERS, 1978, 33 (06) :542-544

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