P-N-JUNCTIONS IN SURFACE REGION OF SILICON OBTAINED BY EVAPORATION OF SILICON IN ULTRAHIGH-VACUUM

被引：16
作者：
ALEKSANDROV, LN
LOVYAGIN, RN
SIMONOV, PA
BZINKOVSKAYA, IS
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1978年 / 45卷 / 02期
关键词：
D O I：
10.1002/pssa.2210450220
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：521 / 527
页数：7
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