MOCVD GROWTH OF CDTE-ZNTE SUPERLATTICES

被引:5
作者
SHTRIKMAN, H
RAIZMAN, A
ORON, M
EGER, D
机构
关键词
D O I
10.1016/0167-577X(87)90124-8
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:345 / 349
页数:5
相关论文
共 10 条
[1]   SOME ASPECTS OF THE X-RAY STRUCTURAL CHARACTERIZATION OF (GA1-XALXAS)N1(GAAS)N2 GAAS(001) SUPERLATTICES [J].
KERVAREC, J ;
BAUDET, M ;
CAULET, J ;
AUVRAY, P ;
EMERY, JY ;
REGRENY, A .
JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1984, 17 (JUN) :196-205
[2]   DEFECTS ASSOCIATED WITH ACCOMMODATION OF MISFIT BETWEEN CRYSTALS [J].
MATTHEWS, JW .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01) :126-133
[3]   DEFECTS IN EPITAXIAL MULTILAYERS .1. MISFIT DISLOCATIONS [J].
MATTHEWS, JW ;
BLAKESLEE, AE .
JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) :118-125
[4]   DEFECTS IN EPITAXIAL MULTILAYERS .2. DISLOCATION PILE-UPS, THREADING DISLOCATIONS, SLIP LINES AND CRACKS [J].
MATTHEWS, JW ;
BLAKESLEE, AE .
JOURNAL OF CRYSTAL GROWTH, 1975, 29 (03) :273-280
[5]   DEFECTS IN EPITAXIAL MULTILAYERS .3. PREPARATION OF ALMOST PERFECT MULTILAYERS [J].
MATTHEWS, JW ;
BLAKESLEE, AE .
JOURNAL OF CRYSTAL GROWTH, 1976, 32 (02) :265-273
[6]   PHOTOLUMINESCENCE STUDIES OF ZNTE-CDTE STRAINED-LAYER SUPERLATTICES [J].
MILES, RH ;
WU, GY ;
JOHNSON, MB ;
MCGILL, TC ;
FAURIE, JP ;
SIVANANTHAN, S .
APPLIED PHYSICS LETTERS, 1986, 48 (20) :1383-1385
[7]   MOLECULAR-BEAM EPITAXIAL-GROWTH OF A NOVEL STRAINED-LAYER SUPERLATTICE SYSTEM - CDTE-ZNTE [J].
MONFROY, G ;
SIVANANTHAN, S ;
CHU, X ;
FAURIE, JP ;
KNOX, RD ;
STAUDENMANN, JL .
APPLIED PHYSICS LETTERS, 1986, 49 (03) :152-154
[8]   GROWTH-CONDITIONS AND CHARACTERIZATION OF INGAAS GAAS STRAINED LAYERS SUPERLATTICES [J].
QUILLEC, M ;
GOLDSTEIN, L ;
LEROUX, G ;
BURGEAT, J ;
PRIMOT, J .
JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) :2904-2909
[9]   OPTICAL AND STRUCTURAL-PROPERTIES OF MOLECULAR-BEAM EPITAXIALLY GROWN GA0.47IN0.53AS/AL0.48IN0.52AS SUPERLATTICES, EMITTING AT 1.55 MU-M AT ROOM-TEMPERATURE [J].
STOLZ, W ;
TAPFER, L ;
BREITSCHWERDT, A ;
PLOOG, K .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1985, 38 (02) :97-102
[10]   A NEW MOVPE TECHNIQUE FOR THE GROWTH OF HIGHLY UNIFORM CMT [J].
TUNNICLIFFE, J ;
IRVINE, SJC ;
DOSSER, OD ;
MULLIN, JB .
JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :245-253