A-SI-H PREPARED BY ION-BOMBARDMENT ACTIVATED HYDROGEN INCORPORATION DURING SI EVAPORATION

被引:4
作者
STRAUVEN, H
STESMANS, A
WINTERS, J
SPINNEWIJN, J
VERBEKE, OB
机构
关键词
D O I
10.1063/1.339415
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:2836 / 2842
页数:7
相关论文
共 17 条
[1]   METAL-SEMICONDUCTOR CONTACTS ON HYDROGENATED AMORPHOUS-SILICON FILMS [J].
ANDERSON, JC ;
GUO, H .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1986, 54 (04) :317-329
[2]   THE EFFECTS OF INCORPORATING WATER INTO VACUUM-DEPOSITED AMORPHOUS-SILICON FILMS [J].
AUDAS, R ;
BRODIE, DE ;
COWAN, JA ;
MOORE, CJL .
CANADIAN JOURNAL OF PHYSICS, 1986, 64 (01) :16-21
[3]   HYDROGENATION AND THE DENSITY OF DEFECT STATES IN AMORPHOUS SILICON [J].
BRODSKY, MH ;
KAPLAN, D .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 32 (1-3) :431-435
[4]   STRUCTURAL, OPTICAL, AND ELECTRICAL PROPERTIES OF AMORPHOUS SILICON FILMS [J].
BRODSKY, MH ;
TITLE, RS ;
WEISER, K ;
PETTIT, GD .
PHYSICAL REVIEW B, 1970, 1 (06) :2632-&
[5]  
GLANG R, 1970, HDB THIN FILM TECHNO, P121
[6]   ELECTRON-SPIN RESONANCE AND HOPPING CONDUCTIVITY OF A-SIOX [J].
HOLZENKAMPFER, E ;
RICHTER, FW ;
STUKE, J ;
VOGETGROTE, U .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 32 (1-3) :327-338
[7]   INFRARED BAND ASSIGNMENTS IN OXIDIZED HYDROGENATED A-SI FILMS [J].
JOHN, P ;
ODEH, IM ;
THOMAS, MJK ;
TRICKER, MJ ;
WILSON, JIB .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1981, 105 (02) :499-505
[8]   DEFECTS IN PLASMA-DEPOSITED A-SI-H [J].
KNIGHTS, JC ;
LUCOVSKY, G ;
NEMANICH, RJ .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 32 (1-3) :393-403
[9]  
KNIGHTS JC, 1974, PHYSICS HYDROGENATED, V1, P26
[10]  
MADAN A, 1984, PHYSICS HYDROGENATED, V1, P245