RADIATION EFFECTS OF FAST-NEUTRONS IN SILICON DIFFUSED DETECTORS

被引:2
作者
SACHELARIE, D
DRAGAN, M
STOICA, M
SACHELARIE, M
机构
来源
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1981年 / 65卷 / 01期
关键词
D O I
10.1002/pssa.2210650144
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:379 / 388
页数:10
相关论文
共 23 条
[1]   RECOMBINATION CENTERS IN SILICON TRANSISTOR EMITTER-BASE JUNCTIONS [J].
BARTHOLOMEW, CY .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (08) :452-+
[2]   SPACE-CHARGE REGION OF NEUTRON-IRRADIATED SILICON P+N JUNCTIONS [J].
BUEHLER, MG .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1970, NS17 (06) :341-+
[3]   RECOMBINATION STATISTICS FOR NEUTRON BOMBARDED SILICON TRANSISTORS [J].
CHOW, MC ;
AZAREWICZ, JL ;
GOBEN, CA .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1968, NS15 (06) :88-+
[4]   LOW-ENERGY PROTON DAMAGE EFFECTS IN SILICON SURFACE-BARRIER DETECTORS [J].
COLEMAN, JA ;
LOVE, DP ;
TRAINOR, JH ;
WILLIAMS, DJ .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1968, NS15 (01) :482-&
[5]   EFFECTS OF DAMAGE BY 0.8 MEV - 5.0 MEV PROTONS IN SILICON SURFACE-BARRIER DETECTORS [J].
COLEMAN, JA ;
LOVE, DP ;
TRAINOR, JH ;
WILLIAMS, DJ .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1968, NS15 (03) :363-&
[6]   IRRADIATION DAMAGE EFFECTS IN SILICON SURFACE BARRIER COUNTERS [J].
GEORGE, GG ;
GUNNERSEN, EM .
NUCLEAR INSTRUMENTS & METHODS, 1964, 25 (02) :253-260
[7]   DISORDERED REGIONS IN SEMICONDUCTORS BOMBARDED BY FAST NEUTRONS [J].
GOSSICK, BR .
JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) :1214-1218
[8]   SURFACE EFFECTS ON P-N JUNCTIONS - CHARACTERISTICS OF SURFACE SPACE-CHARGE REGIONS UNDER NON-EQUILIBRIUM CONDITIONS [J].
GROVE, AS ;
FITZGERALD, DJ .
SOLID-STATE ELECTRONICS, 1966, 9 (08) :783-+
[9]  
HUGHES GW, 1979, SOLID STATE TECHNOL, V22, P70
[10]   USE OF PHOTO-DIODES FOR NEUTRON DOSIMETRY [J].
KOVACEVIC, K ;
STIPCIC, N ;
PAIC, G ;
SLAUS, I ;
EMAN, B ;
PECAR, V ;
ANTIC, M .
NUCLEAR INSTRUMENTS & METHODS, 1978, 148 (02) :291-298