DEFECT LEVELS IN HGI2 AND ILLUMINATION EFFECT

被引:11
作者
MOHAMMEDBRAHIM, T [1 ]
机构
[1] CENS,SAI SES,F-91190 GIF SUR YVETTE,FRANCE
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1981年 / 65卷 / 01期
关键词
D O I
10.1002/pssa.2210650147
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:K1 / K6
页数:6
相关论文
共 8 条
  • [1] OPTO-ELECTRONIC PROPERTIES OF MERCURIC IODIDE
    BUBE, RH
    [J]. PHYSICAL REVIEW, 1957, 106 (04): : 703 - 717
  • [2] THE ELECTRON TRAP MECHANISM OF LUMINESCENCE IN SULPHIDE AND SILICATE PHOSPHORS
    GARLICK, GFJ
    GIBSON, AF
    [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1948, 60 (342): : 574 - 590
  • [3] STUDY OF IMPERFECTIONS IN MERCURY IODIDE BY THERMALLY STIMULATED CURRENTS METHOD
    GELBART, U
    YACOBY, Y
    BEINGLASS, I
    HOLZER, A
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1977, 24 (01) : 135 - 141
  • [4] TRAPPING EFFECTS IN SILVER-DOPED MERCURIC IODIDE-CRYSTALS
    HYDER, SB
    [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (01) : 313 - 319
  • [5] MARTIN GM, 1975, JUN P WORKSH HGI2 ST
  • [6] RANDALL JT, 1945, PROC R SOC LON SER-A, V184, P366
  • [7] SAURA J, THESIS U CUYO BRAZIL
  • [8] STUDY OF TRAPPING IN MERCURIC IODIDE BY THERMALLY STIMULATED CURRENT MEASUREMENTS
    STUCK, R
    MULLER, JC
    PONPON, JP
    SCHARAGER, C
    SCHWAB, C
    SIFFERT, P
    [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) : 1545 - 1548