PREPARATION OF PB(ZR, TI)O-3 THIN-FILMS BY MULTITARGET SPUTTERING

Thin lead zirconate titanate [PZT] (Zr/Ti = 50/50) films (230-430 nm) mere deposited by multitarget sputtering with three stoichiometric PZT targets and one PbO target. To control Pb content in film, the rf power for the PbO target was varied. The rf power for each PZT target was also varied to control the deposition rate. PZT films with single perovskite phase or dominant perovskite phase were obtained only when the film composition was self-controlled. Low deposition rate resulted in a wider range of PbO input power in which Pb/(Zr+Ti) ratio was almost constant. Therefore low deposition rate would enhance the self composition control (SCC) mechanism. A 240-nm-thick PZT film deposited under the SCC mechanism and low deposition rate showed remanent polarization of 21.5 mu C/cm(2), dielectric constant of 600 and leakage current of 7.0 x 10(-8) A/cm(2).