Analysis of reaction gases flow in CVD processes

被引：2

作者：

Mizuno, Y

Uekusa, S

机构：

[1] School of Science and Technology, Meiji University, Tama-ku, Kawasaki, 214

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1995年 / 35卷 / 1-3期

关键词：

chemical vapour deposition; deposition rate; vorticity; Re number; SiN film; Si substrate;

D O I：

10.1016/0921-5107(95)01358-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The relation between the deposition rate of the films and the velocity distribution in the flow field is investigated in detail. The thin SiN films are deposited on Si substrates by the infrared thermal chemical vapor deposition (CVD) at 600 degrees C, flux ratio (NH3/Si2H6) of 50 and 800 and total pressure of 2 and 10 Torr. Velocity, pressure, temperature and vorticity distributions in a flow past a plate are calculated numerically at 600 degrees C and Reynolds number (Re) of 1, 10, 40 and 100. From the results it is shown that the deposited film thickness distribution agrees fairly well with the vorticity distribution. The fact suggests that vorticity has a potent influence on film deposition.

引用

收藏

页码：156 / 159

页数：4

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