RELAXATION OSCILLATIONS AND RECOMBINATION IN EPITAXIAL N-TYPE GALLIUM ARSENIDE

被引：6
作者：
ACKET, GA
SCHEER, JJ
机构：
来源：
SOLID-STATE ELECTRONICS | 1971年 / 14卷 / 02期
关键词：
D O I：
10.1016/0038-1101(71)90091-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：167 / &
相关论文
共 14 条
[1]   RELAXATION OSCILLATIONS DUE TO IMPACT IONISATION IN EPITAXIAL SHEET-TYPE GUNN OSCILLATORS [J].
ACKET, GA ;
SCHEER, JJ .
ELECTRONICS LETTERS, 1969, 5 (08) :160-+
[2]  
CARBALLES JC, 1968, 2 P INT S GALL ARS D, P28
[3]  
HEEKS JS, 1967, T IEEE, VED14, P512
[4]   OPTICAL PROPERTIES OF N-TYPE GAAS .I. DETERMINATION OF HOLE DIFFUSION LENGTH FROM OPTICAL ABSORPTION AND PHOTOLUMINESCENCE MEASUREMENTS [J].
HWANG, CJ .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) :3731-&
[5]  
MADELUNG O, 1964, PHYSICS 3 5 COMPOUND, P141
[6]  
MUNCH WV, 1969, TECHNOLOGIE GALLIUMA, P5
[7]  
MUNCH WV, 1969, TECHNOLOGIE GALLIUMA, P12
[8]   DIFFUSION AND DETECTION OF OXYGEN IN GAAS [J].
RACHMANN, J ;
BIERMANN, R .
SOLID STATE COMMUNICATIONS, 1969, 7 (24) :1771-&
[9]  
Shur M. S., 1969, Fizika i Tekhnika Poluprovodnikov, V3, P1465
[10]   RECOMBINATION PROCESSES FOLLOWING IMPACT IONIZATION BY HIGH-FIELD DOMAINS IN GALLIUM ARSENIDE [J].
SOUTHGATE, PD .
JOURNAL OF APPLIED PHYSICS, 1967, 38 (12) :4589-+
12