SHORT WAVELENGTH OPERATION OF LOW THRESHOLD CURRENT ALGAINP STRAINED QUANTUM-WELL LASER-DIODES

被引：0
作者：
YOSHIDA, I
KATSUYAMA, T
SHINKAI, J
HASHIMOTO, J
HAYASHI, H
机构：
来源：
INSTITUTE OF PHYSICS CONFERENCE SERIES | 1992年 / 120期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Strained single quantum well, (Al0.2Ga0.8)0.43In0.57P (DELTA-a/a = 0.65%), was applied to visible laser diode to obtain short wavelength, low threshold devices. The laser was grown by low pressure OMVPE at 760-degrees-C on (100) GaAs substrate. High growth temperature (Tg) was used to grow high quality Al contained active layers. The high Tg also suppressed the formation of natural superlattice and kept the oscillation wavelength short without using off-angle substrates. The continuous wave (CW) oscillation wavelength was 637nm at 25-degrees-C for the index guided structure device (5 x 230um) . The threshold current at the temperature was 52mA, which is the lowest value, to our knowledge, for the 630nm range lasers.
引用
收藏
页码：493 / 498
页数：6
相关论文
共 50 条
[31]   Low-threshold 833-nm GaAsP-AlGaAs tensile-strained quantum-well laser diodes [J].
Xerox Palo Alto Research Cent, Palo Alto, United States .
IEEE Photonics Technol Lett, 1 (13-15)
[32]   On the sensitivity to temperature of the threshold current in a strained quantum-well semiconductor laser under a magnetic field [J].
Grado-Caffaro, M. A. ;
Grado-Caffaro, M. .
OPTIK, 2011, 122 (07) :561-562
[33]   Low-threshold 833-nm GaAsP-AlGaAs tensile-strained quantum-well laser diodes [J].
Sun, D ;
Treat, DW .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1996, 8 (01) :13-15
[34]   Strained single-quantum-well AlGaInP laser diodes with asymmetric waveguiding structure [J].
Kawanaka, Satoshi ;
Tanaka, Toshiaki ;
Yanagisawa, Hironori ;
Yano, Shinichiro ;
Minagawa, Shigekazu .
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1993, 32 (1 B) :609-613
[35]   OPTIMIZATION OF 670-NM STRAINED-QUANTUM-WELL LASER-DIODES FOR HIGH-TEMPERATURE OPERATION [J].
SMOWTON, PM ;
SUMMERS, HD ;
REES, P ;
BLOOD, P .
IEE PROCEEDINGS-OPTOELECTRONICS, 1994, 141 (02) :136-140
[36]   Threshold conditions for an ultraviolet wavelength GaN quantum-well laser [J].
Chow, W.W. ;
Crawford, M.Hagerott ;
Girndt, A. ;
Koch, S.W. .
IEEE Journal on Selected Topics in Quantum Electronics, 4 (03) :514-519
[37]   Threshold conditions for an ultraviolet wavelength GaN quantum-well laser [J].
Chow, WW ;
Crawford, MH ;
Girndt, A ;
Koch, SW .
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1998, 4 (03) :514-519
[38]   THRESHOLD CURRENT OF 670-NM ALGAINP STRAINED-QUANTUM-WELL LASERS [J].
SMOWTON, PM ;
SUMMERS, HD ;
REES, P ;
BLOOD, P .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1994, 6 (08) :910-912
[39]   STRAINED GAXIN1-XP/(ALGA)0.5IN0.5P HETEROSTRUCTURES AND QUANTUM-WELL LASER-DIODES [J].
BOUR, DP ;
GEELS, RS ;
TREAT, DW ;
PAOLI, TL ;
PONCE, F ;
THORNTON, RL ;
KRUSOR, BS ;
BRINGANS, RD ;
WELCH, DF .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1994, 30 (02) :593-607
[40]   MICROAMPERE THRESHOLD CURRENT OPERATION OF GAAS AND STRAINED INGAAS QUANTUM-WELL LASERS AT LOW-TEMPERATURES (5-K) [J].
ENG, LE ;
SAAR, A ;
CHEN, TR ;
GRAVE, I ;
KUZE, N ;
YARIV, A .
APPLIED PHYSICS LETTERS, 1991, 58 (24) :2752-2754
12345