MULTI-SCANNING ELECTRON-BEAM ANNEALING OF PHOSPHORUS-IMPLANTED SILICON

被引：18
|
作者：
BENTINI, GG
GALLONI, R
NIPOTI, R
机构：
来源：
APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 08期
关键词：
D O I：
10.1063/1.91616
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：661 / 663
页数：3
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