MULTI-SCANNING ELECTRON-BEAM ANNEALING OF PHOSPHORUS-IMPLANTED SILICON

被引：18

作者：

BENTINI, GG

GALLONI, R

NIPOTI, R

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 08期

关键词：

D O I：

10.1063/1.91616

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：661 / 663

页数：3

共 12 条

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DRIGO, AV ;

FOTI, G ;

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SERVIDORI, M .

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[2]

DESALVO A, 1978, 195767ESI CEECNR REP

[3] LASER-SCANNING APPARATUS FOR ANNEALING OF ION-IMPLANTATION DAMAGE IN SEMICONDUCTORS [J].

GAT, A ;

GIBBONS, JF .

APPLIED PHYSICS LETTERS, 1978, 32 (03) :142-144

[4] PHYSICAL AND ELECTRICAL-PROPERTIES OF LASER-ANNEALED ION-IMPLANTED SILICON [J].

GAT, A ;

GIBBONS, JF ;

MAGEE, TJ ;

PENG, J ;

DELINE, VR ;

WILLIAMS, P ;

EVANS, CA .

APPLIED PHYSICS LETTERS, 1978, 32 (05) :276-278

[5]

KACHURIN GA, 1976, ION IMPLANTATION SEM

[6] SILICON SOLAR-CELLS BY HIGH-SPEED LOW-TEMPERATURE PROCESSING [J].

KIRKPATRICK, AR ;

MINNUCCI, JA ;

GREENWALD, AC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) :429-432

[7]

KIRKPATRICK AR, 1978, C LASER EFFECT ION I

[8] ELECTRON-BEAM ANNEALING OF ION-IMPLANTED SILICON [J].

MCMAHON, RA ;

AHMED, H .

ELECTRONICS LETTERS, 1979, 15 (02) :45-47

[9]

MERLI PG, UNPUBLISHED

[10]

RATNAKUMAR KN, 1979, APPL PHYS LETT, V35, P463, DOI 10.1063/1.91170

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