MULTI-SCANNING ELECTRON-BEAM ANNEALING OF PHOSPHORUS-IMPLANTED SILICON

[1] 2-STAGE LASER ANNEALING OF LATTICE DISORDER IN PHOSPHORUS IMPLANTED SILICON [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 49 (01): : 347 - 352

[2] DESALVO A, 1978, 195767ESI CEECNR REP

[3] LASER-SCANNING APPARATUS FOR ANNEALING OF ION-IMPLANTATION DAMAGE IN SEMICONDUCTORS [J]. APPLIED PHYSICS LETTERS, 1978, 32 (03) : 142 - 144

[4] PHYSICAL AND ELECTRICAL-PROPERTIES OF LASER-ANNEALED ION-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1978, 32 (05) : 276 - 278

[5] KACHURIN GA, 1976, ION IMPLANTATION SEM

[6] SILICON SOLAR-CELLS BY HIGH-SPEED LOW-TEMPERATURE PROCESSING [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) : 429 - 432

[7] KIRKPATRICK AR, 1978, C LASER EFFECT ION I

[8] ELECTRON-BEAM ANNEALING OF ION-IMPLANTED SILICON [J]. ELECTRONICS LETTERS, 1979, 15 (02) : 45 - 47

[9] MERLI PG, UNPUBLISHED

[10] RATNAKUMAR KN, 1979, APPL PHYS LETT, V35, P463, DOI 10.1063/1.91170

[1] 2-STAGE LASER ANNEALING OF LATTICE DISORDER IN PHOSPHORUS IMPLANTED SILICON [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 49 (01): : 347 - 352

[2] DESALVO A, 1978, 195767ESI CEECNR REP

[3] LASER-SCANNING APPARATUS FOR ANNEALING OF ION-IMPLANTATION DAMAGE IN SEMICONDUCTORS [J]. APPLIED PHYSICS LETTERS, 1978, 32 (03) : 142 - 144

[4] PHYSICAL AND ELECTRICAL-PROPERTIES OF LASER-ANNEALED ION-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1978, 32 (05) : 276 - 278

[5] KACHURIN GA, 1976, ION IMPLANTATION SEM

[6] SILICON SOLAR-CELLS BY HIGH-SPEED LOW-TEMPERATURE PROCESSING [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) : 429 - 432

[7] KIRKPATRICK AR, 1978, C LASER EFFECT ION I

[8] ELECTRON-BEAM ANNEALING OF ION-IMPLANTED SILICON [J]. ELECTRONICS LETTERS, 1979, 15 (02) : 45 - 47

[9] MERLI PG, UNPUBLISHED

[10] RATNAKUMAR KN, 1979, APPL PHYS LETT, V35, P463, DOI 10.1063/1.91170