ELECTRON-BEAM ANNEALING OF ION-IMPLANTED AL

被引：7

|

作者：

WAMPLER, WR

FOLLSTAEDT, DM

PICRAUX, ST

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 05期

关键词：

D O I：

10.1063/1.91489

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：366 / 368

页数：3

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