ELECTRON-BEAM ANNEALING OF ION-IMPLANTED AL

被引：7
|
作者：
WAMPLER, WR
FOLLSTAEDT, DM
PICRAUX, ST
机构：
来源：
APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 05期
关键词：
D O I：
10.1063/1.91489
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：366 / 368
页数：3
相关论文
共 50 条
  • [21] PULSED ELECTRON-BEAM IRRADIATION OF ION-IMPLANTED COPPER SINGLE-CRYSTALS
    HIRVONEN, JK
    POATE, JM
    GREENWALD, A
    LITTLE, R
    APPLIED PHYSICS LETTERS, 1980, 36 (07) : 564 - 566
  • [22] ELECTRON-BEAM FABRICATION OF ION-IMPLANTED HIGH-PERFORMANCE FET CIRCUITS
    FANG, F
    HATZAKIS, M
    TING, CH
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1973, 10 (06): : 1082 - 1085
  • [23] ANNEALING OF IN IMPLANTED GERMANIUM BY PULSED ELECTRON-BEAM
    LAUGIER, A
    BARBIER, D
    CACHARD, A
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY): : 701 - 705
  • [24] A 3-DIMENSIONAL TRANSIENT MODEL DEVELOPED TO SIMULATE BY COMPUTER THE SCANNED ELECTRON-BEAM ANNEALING OF ION-IMPLANTED SILICON
    RAIS, A
    GAY, HC
    MORELIERE, R
    PHYSICOCHEMICAL HYDRODYNAMICS, 1987, 8 (04): : 383 - 400
  • [25] RAPID ISOTHERMAL ANNEALING OF ION-IMPLANTED SILICON DEVICES BY UNIFORM LARGE AREA IRRADIATION WITH A NEW ELECTRON-BEAM SYSTEM
    DORI, L
    IMPRONTA, M
    LULLI, G
    MERLI, PG
    SEVERI, M
    JOURNAL DE PHYSIQUE, 1983, 44 (NC-5): : 415 - 419
  • [26] ION-IMPLANTED, ELECTRON-BEAM ANNEALED TIN FILMS AS DIFFUSION-BARRIERS FOR AL ON SI SHALLOW JUNCTIONS
    ARMIGLIATO, A
    FINETTI, M
    GARRIDO, J
    GUERRI, S
    OSTOJA, P
    SCORZONI, A
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (06): : 2237 - 2241
  • [27] Annealing of ion-implanted defects in diamond by mega-electron-volt ion beam irradiation
    Nakata, J
    NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY, 1999, 9 (02): : 141 - 143
  • [28] THE ANNEALING OF PHOSPHORUS-ION-IMPLANTED CADMIUM TELLURIDE BY A PULSED ELECTRON-BEAM
    YANG, CB
    LUE, JT
    HWANG, HL
    PENG, ML
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) : 2297 - 2300
  • [29] HIGHLY CONTROLLED DIFFUSION OF ION-IMPLANTED ARSENIC BY MULTIPLE SCAN ELECTRON-BEAM HEATING
    GODFREY, DJ
    MCMAHON, RA
    AHMED, H
    DOWSETT, M
    JOURNAL DE PHYSIQUE, 1983, 44 (NC-5): : 229 - 233
  • [30] AN ELECTRON-GUN FOR ANNEALING OF ION-IMPLANTED MATERIALS
    LULLI, G
    MERLI, PG
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (06) : C233 - C233
12345