ELECTRON-BEAM ANNEALING OF ION-IMPLANTED AL

被引：7
作者：
WAMPLER, WR
FOLLSTAEDT, DM
PICRAUX, ST
机构：
来源：
APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 05期
关键词：
D O I：
10.1063/1.91489
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：366 / 368
页数：3
相关论文
共 14 条
[1]   LASER PROCESSING OF ION-IMPLANTED SILICON [J].
APPLETON, BR ;
WHITE, CW ;
LARSON, BC ;
WILSON, SR ;
NARAYAN, J .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1979, 26 (01) :1686-1692
[2]   IMPURITY DIFFUSION OF ANTIMONY AND SILVER IN ALUMINIUM [J].
BADRINAR.S ;
MATHUR, HB .
INTERNATIONAL JOURNAL OF APPLIED RADIATION AND ISOTOPES, 1968, 19 (04) :353-&
[3]   ARSENIC DIFFUSION IN SILICON MELTED BY HIGH-POWER NANOSECOND LASER PULSING [J].
BAERI, P ;
CAMPISANO, SU ;
FOTI, G ;
RIMINI, E .
APPLIED PHYSICS LETTERS, 1978, 33 (02) :137-140
[4]   SEGREGATION EFFECTS IN CU-IMPLANTED SI AFTER LASER-PULSE MELTING [J].
BAERI, P ;
CAMPISANO, SU ;
FOTI, G ;
RIMINI, E .
PHYSICAL REVIEW LETTERS, 1978, 41 (18) :1246-1249
[5]  
DELLAMEA G, 1978, LASER SOLID INTERACT, P212
[6]  
FERRIS SD, 1978, LASER SOLID INTERACT
[7]   PULSED-ELECTRON-BEAM ANNEALING OF ION-IMPLANTATION DAMAGE [J].
GREENWALD, AC ;
KIRKPATRICK, AR ;
LITTLE, RG ;
MINNUCCI, JA .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :783-787
[8]  
HANSEN M, 1958, CONSTITUTION BINARY, P130
[9]  
JAIN AK, 1979, 4TH INT C ION BEAM A
[10]   EXPERIMENTAL-STUDY OF PRECIPITATION IN AN ION-IMPLANTED METAL - SB IN AL [J].
KANT, RA ;
MYERS, SM ;
PICRAUX, ST .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) :214-222
12