ENHANCED SURFACE EMITTING WAVE-GUIDES FOR VISIBLE, MONOLITHIC SEMICONDUCTOR-LASER SOURCES

被引：52
作者：
NORMANDIN, R
WILLIAMS, RL
CHATENOUD, F
机构：
[1] Optoelectronic Devices and Solid State Optoelectronics Consortium, Institute for Microstructural Sciences, National Research Council of Canada, Ottawa
来源：
ELECTRONICS LETTERS | 1990年 / 26卷 / 25期
关键词：
Nonlinear optics; Semiconductor lasers; Surface emitting lasers;
D O I：
10.1049/el:19901345
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
By using AlGaAs resonant multilayers embedded in a waveguide geometry a ten million fold enhancement for surface emitting harmonic generation over a normal GaAs film was obtained. The multilayer system allows compensation for material losses at the harmonic and the use of thick films for efficient coupling of communication fibres to the device. The experimental results agree closely with theory and a monolithic implementation of visible, surface emitting solid state diode lasers is presented for InGaAs, InP and GaAs geometries. © 1990, The Institution of Electrical Engineers. All rights reserved.
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页码：2088 / 2089
页数：2
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