A NEW TEST STRUCTURE FOR RECOMBINATION MEASUREMENTS IN THIN SI-LAYERS FOR VLSI STRUCTURES

被引：3
作者：
BELLONE, S
SPIRITO, P
机构：
[1] Dipartimento di Ingegneria Elettronica, Napoli, 21 - 80125, Universitá di Napoli Via Claudio
来源：
EUROPEAN TRANSACTIONS ON TELECOMMUNICATIONS | 1990年 / 1卷 / 03期
关键词：
D O I：
10.1002/ett.4460010317
中图分类号：
TN [电子技术、通信技术];
学科分类号：
0809 ;
摘要：
The capability of two recently proposed measurements methods to evaluate recombination properties of thin layers is discussed. Both methods make use of a novel test structure which allows one to evaluate a) the lifetime profile along submicron epilayers and b) the recombination velocity set by a generic heavily doped layer. Measurements performed on 1 μm thick epilayers demonstrate that the recombination lifetime in these layers is not correlated with the doping level and it has values lower than those reported in thicker layers. Moreover, experimental data collected n+ layers of different technology suggest a phonon‐assisted lifetime value much lower than that reported in literature for uniformly doped bulk material. Copyright © 1990 John Wiley & Sons, Ltd.
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页码：351 / 362
页数：12
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