COMPARISON OF CHARACTERISTICS OF LIGHTLY-DOPED DRAIN MOSFETS

被引：5
作者：
LIU, BD
CHIEN, IK
机构：
[1] Department of Electrical Engineering National Cheng Kung University
来源：
SOLID-STATE ELECTRONICS | 1990年 / 33卷 / 01期
关键词：
D O I：
10.1016/0038-1101(90)90020-F
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
[No abstract available]
引用
收藏
页码：143 / 144
页数：2
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