EXTREMELY HIGH ELECTRON-MOBILITY IN A GAAS-GAXIN1-XP HETEROSTRUCTURE GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：45

作者：

RAZEGHI, M ^{[1
]}

DEFOUR, M ^{[1
]}

OMNES, F ^{[1
]}

DOBERS, M ^{[1
]}

VIEREN, JP ^{[1
]}

GULDNER, Y ^{[1
]}

机构：

[1] ECOLE NORM SUPER,PHYS SOLIDES GRP,F-75231 PARIS 05,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 05期

关键词：

D O I：

10.1063/1.101851

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：457 / 459

页数：3

共 18 条

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