EXTREMELY HIGH ELECTRON-MOBILITY IN A GAAS-GAXIN1-XP HETEROSTRUCTURE GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：45

作者：

RAZEGHI, M ^{[1
]}

DEFOUR, M ^{[1
]}

OMNES, F ^{[1
]}

DOBERS, M ^{[1
]}

VIEREN, JP ^{[1
]}

GULDNER, Y ^{[1
]}

机构：

[1] ECOLE NORM SUPER,PHYS SOLIDES GRP,F-75231 PARIS 05,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 05期

关键词：

D O I：

10.1063/1.101851

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：457 / 459

页数：3

共 18 条

[1]

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[2]

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[3] CHLORIDE VAPOR-PHASE EPITAXIAL-GROWTH OF A GA0.52IN0.48P/GAAS HETEROSTRUCTURE WITH AN ABRUPT HETEROINTERFACE [J].

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[4] SHALLOW AND DEEP DONOR LEVELS IN S-DOPED GA0.52IN0.48P GROWN BY CHLORIDE VPE [J].

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[5] OBSERVATION OF DONOR-RELATED DEEP LEVELS IN GAXIN1-XP (0.52-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.71) [J].

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[6] DONOR-RELATED DEEP LEVEL IN S-DOPED GA0.52IN0.48P GRWON BY CHLORIDE VPE [J].

KITAHARA, K ;

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[7]

MADELUNG O, 1982, LANDOLTBORNSTEIN 3

[8] DETERMINATION OF VALENCE AND CONDUCTION-BAND DISCONTINUITIES AT THE (GA,IN) P/GAAS HETEROJUNCTION BY C-V PROFILING [J].

RAO, MA ;

CAINE, EJ ;

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JOURNAL OF APPLIED PHYSICS, 1987, 61 (02) :643-649

[9] 1ST OBSERVATION OF THE TWO-DIMENSIONAL PROPERTIES OF THE ELECTRON-GAS IN GA0.49IN0.51P/GAASHETEROJUNCTIONS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

RAZEGHI, M ;

MAUREL, P ;

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APPLIED PHYSICS LETTERS, 1986, 48 (19) :1267-1269

[10]

RAZEGHI M, UNPUB

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