ELECTRICAL AND OPTICAL CHARACTERIZATION OF MOLECULAR-BEAM EPITAXY GROWN GA-DOPED ZNSE

被引：10

作者：

VAZIRI, M ^{[1
]}

REIFENBERGER, R ^{[1
]}

GUNSHOR, RL ^{[1
]}

KOLODZIEJSKI, LA ^{[1
]}

VENKATESAN, S ^{[1
]}

PIERRET, RF ^{[1
]}

机构：

[1] PURDUE UNIV,DEPT PHYS,W LAFAYETTE,IN 47907

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 02期

关键词：

D O I：

10.1116/1.584728

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：253 / 258

页数：6

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