LOW-TEMPERATURE EPITAXIAL-GROWTH OF INSB ON GAAS

被引：0
作者：
HARIU, T
OHSHIMA, T
YAMAUCHI, S
机构：
来源：
GALLIUM ARSENIDE AND RELATED COMPOUNDS 1988 | 1989年
关键词：
D O I：
暂无
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
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页码：233 / 236
页数：4
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