ATOMIC LAYER EPITAXY OF GAAS USING TRIETHYLGALLIUM AND ARSINE

被引：32
|
作者：
OHNO, H
OHTSUKA, S
ISHII, H
MATSUBARA, Y
HASEGAWA, H
机构：
来源：
APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 20期
关键词：
D O I：
10.1063/1.101195
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：2000 / 2002
页数：3
相关论文
共 50 条
  • [31] ATOMIC LAYER EPITAXY OF GAAS ON SI BY MOCVD
    KARAM, NH
    HAVEN, VE
    VERNON, SM
    TRAN, JC
    ELMASRY, NA
    III-V HETEROSTRUCTURES FOR ELECTRONIC / PHOTONIC DEVICES, 1989, 145 : 331 - 336
  • [32] IMPROVED CDTE LAYERS ON GAAS AND SI USING ATOMIC LAYER EPITAXY
    WANG, WS
    EHSANI, H
    BHAT, I
    JOURNAL OF ELECTRONIC MATERIALS, 1993, 22 (08) : 873 - 878
  • [33] SURFACE-REACTIONS IN THE ATOMIC LAYER EPITAXY OF GAAS USING MONOETHYLARSINE
    MAA, BY
    DAPKUS, PD
    APPLIED PHYSICS LETTERS, 1991, 58 (16) : 1762 - 1764
  • [34] Atomic layer epitaxy of MnAs on GaAs(001)
    Ozeki, M.
    Haraguchi, T.
    Fujita, A.
    JOURNAL OF CRYSTAL GROWTH, 2007, 298 (SPEC. ISS) : 90 - 93
  • [35] Trisneopentylgallium as a precursor for atomic layer epitaxy of GaAs
    Yeo, P
    Ares, R
    Watkins, SP
    Horley, GA
    OBrien, P
    Jones, AC
    JOURNAL OF ELECTRONIC MATERIALS, 1997, 26 (10) : 1174 - 1177
  • [36] GAAS ATOMIC LAYER EPITAXY BY HYDRIDE VPE
    USUI, A
    SUNAKAWA, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (03): : L212 - L214
  • [37] ON THE EFFECT OF ARSINE FOR THE DECOMPOSITION OF TRIETHYLGALLIUM DURING EPITAXIAL-GROWTH OF GAAS
    DEPPERT, K
    JONSSON, J
    JOURNAL OF CRYSTAL GROWTH, 1993, 133 (3-4) : 296 - 302
  • [38] CHEMICAL BEAM EPITAXIAL-GROWTH OF HIGH-PURITY GAAS USING TRIETHYLGALLIUM AND ARSINE
    CHIU, TH
    TSANG, WT
    SCHUBERT, EF
    AGYEKUM, E
    APPLIED PHYSICS LETTERS, 1987, 51 (14) : 1109 - 1111
  • [39] CARBON INCORPORATION IN GAAS LAYER GROWN BY ATOMIC LAYER EPITAXY
    MOCHIZUKI, K
    OZEKI, M
    KODAMA, K
    OHTSUKA, N
    JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) : 557 - 561
  • [40] COMPLETE STRESS RELIEF IN SELECTIVE AREA EPITAXY OF GAAS ON SI USING ATOMIC LAYER EPITAXY
    KARAM, NH
    HAVEN, V
    VERNON, SM
    ELMASRY, N
    LINGUNIS, EH
    HAEGEL, N
    JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (07) : 52 - 52
12345