ATOMIC LAYER EPITAXY OF GAAS USING TRIETHYLGALLIUM AND ARSINE

被引：32

作者：

OHNO, H

OHTSUKA, S

ISHII, H

MATSUBARA, Y

HASEGAWA, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 20期

关键词：

D O I：

10.1063/1.101195

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2000 / 2002

页数：3

共 10 条

[1] ATOMIC-LAYER GROWTH OF GAAS BY MODULATED-CONTINUOUS-WAVE LASER METAL-ORGANIC VAPOR-PHASE EPITAXY [J].

AOYAGI, Y ;

DOI, A ;

IWAI, S ;

NAMBA, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (05) :1460-1464

[2] GAAS/ALGAAS QUANTUM-WELL LASERS WITH ACTIVE REGIONS GROWN BY ATOMIC LAYER EPITAXY [J].

DENBAARS, SP ;

BEYLER, CA ;

HARIZ, A ;

DAPKUS, PD .

APPLIED PHYSICS LETTERS, 1987, 51 (19) :1530-1532

[3]

ISHII H, IN PRESS J CRYST GRO

[4]

MORI K, 1986, 18 C SOL STAT DEV MA, P743

[5] GALLIUM-ARSENIDE THIN-FILMS BY LOW-TEMPERATURE PHOTOCHEMICAL PROCESSES [J].

NISHIZAWA, J ;

KURABAYASHI, T ;

ABE, H ;

SAKURAI, N .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :1572-1577

[6]

NISHIZAWA J, 1985, J ELECTROCHEM SOC, V132, P1198

[7] SELF-LIMITING DEPOSITION OF GA ON A GAAS SURFACE BY THERMAL-DECOMPOSITION OF DIETHYLGALLIUMCHLORIDE OBSERVED BY X-RAY PHOTOELECTRON-SPECTROSCOPY [J].

OHNO, H ;

ISHII, H ;

MATSUZAKI, K ;

HASEGAWA, H .

APPLIED PHYSICS LETTERS, 1989, 54 (12) :1124-1126

[8] GROWTH OF GAAS, INAS, AND GAAS/INAS SUPERLATTICE STRUCTURES AT LOW SUBSTRATE-TEMPERATURE BY MOVPE [J].

OHNO, H ;

OHTSUKA, S ;

OHUCHI, A ;

MATSUBARA, T ;

HASEGAWA, H .

JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) :342-346

[9] PLANAR DOPING BY INTERRUPTED MOVPE GROWTH OF GAAS [J].

OHNO, H ;

IKEDA, E ;

HASEGAWA, H .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :15-20

[10] SELF-LIMITING MECHANISM IN THE ATOMIC LAYER EPITAXY OF GAAS [J].

TISCHLER, MA ;

BEDAIR, SM .

APPLIED PHYSICS LETTERS, 1986, 48 (24) :1681-1683

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