SILICON MIGRATION DURING MOVPE OF ALGAAS/GAAS LASER STRUCTURES

[1] LOW-NOISE MICROWAVE FIELD-EFFECT TRANSISTORS USING ORGANOMETALLIC GAAS [J]. APPLIED PHYSICS LETTERS, 1984, 44 (11) : 1056 - 1058

[2] SILICON AND GERMANIUM DOPING OF EPITAXIAL GALLIUM-ARSENIDE GROWN BY THE TRIMETHYLGALLIUM-ARSINE METHOD [J]. JOURNAL OF CRYSTAL GROWTH, 1979, 47 (5-6) : 613 - 618

[3] SENSITIVITY OF SI DIFFUSION IN GAAS TO COLUMN-IV AND COLUMN-VI DONOR SPECIES [J]. APPLIED PHYSICS LETTERS, 1988, 52 (02) : 129 - 131

[4] UNEXPECTEDLY HIGH-ENERGY PHOTO-LUMINESCENCE OF HIGHLY SI DOPED GAAS GROWN BY MOVPE [J]. JOURNAL OF CRYSTAL GROWTH, 1982, 57 (02) : 318 - 324

[5] MO-VPE (AL,GA)AS/GAAS 870-NM OXIDE STRIPE LASERS WITH HIGHLY UNIFORM LASER CHARACTERISTICS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (01): : L17 - L20

[6] DRUMINSKI M, 1984, 2ND INT C MET VAP PH

[7] SILICON MIGRATION DURING MBE GROWTH OF DOPED (AL,GA)AS FILMS [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1986, 41 (03): : 237 - 241

[8] DIFFUSION OF SILICON IN GALLIUM-ARSENIDE USING RAPID THERMAL-PROCESSING - EXPERIMENT AND MODEL [J]. APPLIED PHYSICS LETTERS, 1984, 44 (08) : 750 - 752

[9] HEIBLUM M, 1985, J VAC SCI TECHNOL B, V3, P820, DOI 10.1116/1.583110

[10] HEAVY DOPING OF GAAS AND ALGAAS WITH SILICON BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) : 6751 - 6753

[1] LOW-NOISE MICROWAVE FIELD-EFFECT TRANSISTORS USING ORGANOMETALLIC GAAS [J]. APPLIED PHYSICS LETTERS, 1984, 44 (11) : 1056 - 1058

[2] SILICON AND GERMANIUM DOPING OF EPITAXIAL GALLIUM-ARSENIDE GROWN BY THE TRIMETHYLGALLIUM-ARSINE METHOD [J]. JOURNAL OF CRYSTAL GROWTH, 1979, 47 (5-6) : 613 - 618

[3] SENSITIVITY OF SI DIFFUSION IN GAAS TO COLUMN-IV AND COLUMN-VI DONOR SPECIES [J]. APPLIED PHYSICS LETTERS, 1988, 52 (02) : 129 - 131

[4] UNEXPECTEDLY HIGH-ENERGY PHOTO-LUMINESCENCE OF HIGHLY SI DOPED GAAS GROWN BY MOVPE [J]. JOURNAL OF CRYSTAL GROWTH, 1982, 57 (02) : 318 - 324

[5] MO-VPE (AL,GA)AS/GAAS 870-NM OXIDE STRIPE LASERS WITH HIGHLY UNIFORM LASER CHARACTERISTICS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (01): : L17 - L20

[6] DRUMINSKI M, 1984, 2ND INT C MET VAP PH

[7] SILICON MIGRATION DURING MBE GROWTH OF DOPED (AL,GA)AS FILMS [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1986, 41 (03): : 237 - 241

[8] DIFFUSION OF SILICON IN GALLIUM-ARSENIDE USING RAPID THERMAL-PROCESSING - EXPERIMENT AND MODEL [J]. APPLIED PHYSICS LETTERS, 1984, 44 (08) : 750 - 752

[9] HEIBLUM M, 1985, J VAC SCI TECHNOL B, V3, P820, DOI 10.1116/1.583110

[10] HEAVY DOPING OF GAAS AND ALGAAS WITH SILICON BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) : 6751 - 6753