NEW EVIDENCE OF SMALL LATTICE-RELAXATION FOR THE DX CENTER IN AL-CHI-GA1-CHI-AS

被引：10

作者：

TALWAR, DN

MANASREH, MO

SUH, KS

COVINGTON, BC

机构：

[1] SYSTRAN CORP,DAYTON,OH 45432

[2] SAM HOUSTON STATE UNIV,DEPT PHYS,HUNTSVILLE,TX 77341

[3] UNIV HOUSTON,DEPT PHYS,HOUSTON,TX 77004

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 17期

关键词：

D O I：

10.1063/1.98678

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1358 / 1360

页数：3

共 33 条

[21] OPTICAL-ABSORPTION AND PHOTOLUMINESCENCE STUDIES OF THIN GAAS LAYERS IN GAAS-AL CHI GA1-CHI AS DOUBLE HETEROSTRUCTURES
SELL, DD
CASEY, HC
JOURNAL OF APPLIED PHYSICS, 1974, 45 (02) : 800 - 807
[22] A NEW PROPOSED METHOD FOR DETERMINING INNER OR OUTER CROSSING LATTICE-RELAXATION OF DX CENTERS IN ALXGA1-XAS BASED ON PRESSURE EFFECTS
MING, FL
YU, PY
SOLID STATE COMMUNICATIONS, 1987, 61 (01) : 13 - 15
[23] SPATIALLY DEPENDENT SCREENING CALCULATION OF BINDING-ENERGIES OF HYDROGENIC IMPURITY STATES IN GAAS-GA1-CHI-AL-CHI-AS QUANTUM WELLS
OLIVEIRA, LE
PHYSICAL REVIEW B, 1988, 38 (15): : 10641 - 10644
[24] EVIDENCE OF GAMMA-GAMMA AND CHI-CHI COUPLING USING A SINGLE ABRUPT ISOTYPE N-GAAS/AL0.5GA0.5AS HETEROJUNCTION
SERRA, AC
SANTOS, HA
MARTY, A
BAILBE, J
REY, G
SOLID-STATE ELECTRONICS, 1992, 35 (08) : 1065 - 1071
[25] DIRECT EVIDENCE FOR THE NEGATIVE-U NATURE OF THE DX CENTER IN AL(X)GA(1-X)AS - COMMENT
LI, MF
DU, AY
LUO, YY
CHUA, SJ
PHYSICAL REVIEW B, 1994, 49 (16): : 11479 - 11479
[26] OPTICAL-TRANSITIONS AT CONFINED RESONANCES IN (001) GAAS-GA1-CHI-AL-AS SUPERLATTICES
NINNO, D
WONG, KB
GELL, MA
JAROS, M
PHYSICAL REVIEW B, 1985, 32 (04): : 2700 - 2702
[27] THE DX CENTER IN SI-PLANAR-DOPED AL0.32GA1-0.32AS
MEJRI, H
SELMI, A
MAAREF, H
BOURGOIN, JC
JOURNAL OF APPLIED PHYSICS, 1991, 69 (07) : 4060 - 4063
[28] OBSERVATION OF A NONRADIATIVE DONOR-RELATED DEFECT CENTER IN ALXGA1-XAS WITH ANOMALOUSLY LARGE LATTICE-RELAXATION
LANG, DV
LOGAN, RA
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (09) : 1215 - 1215
[29] ELECTRON-TEMPERATURE DEPENDENCES OF NONRADIATIVE MULTIPHONON HOT-ELECTRON CAPTURE COEFFICIENTS OF DEEP TRAPS IN SEMICONDUCTORS .1. SMALL LATTICE-RELAXATION
PASSLER, R
SOLID-STATE ELECTRONICS, 1984, 27 (02) : 155 - 166
[30] NUCLEAR HYPERFINE INTERACTION OF THE DX CENTER AND ITS PERSISTENT PHOTOIONIZATION IN TE-DOPED AL(X)GA(1-X)AS
BEMELMANS, H
BORGHS, G
LANGOUCHE, G
PHYSICAL REVIEW LETTERS, 1994, 72 (06) : 856 - 859

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