ANTIPHASE DOMAINS IN GAAS GROWN ON A (001)-ORIENTED SI SUBSTRATE BY MOLECULAR-BEAM EPITAXY

被引：23

作者：

NOGE, H

KANO, H

HASHIMOTO, M

IGARASHI, I

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 04期

关键词：

D O I：

10.1063/1.341698

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2246 / 2248

页数：3

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共 25 条

[1] STEPS ON (001) SILICON SURFACES
ASPNES, DE
IHM, J
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 939 - 944
[2] BIATOMIC STEPS ON (001) SILICON SURFACES
ASPNES, DE
IHM, J
[J]. PHYSICAL REVIEW LETTERS, 1986, 57 (24) : 3054 - 3057
[3] FORMATION OF THE INTERFACE BETWEEN GAAS AND SI - IMPLICATIONS FOR GAAS-ON-SI HETEROEPITAXY
BRINGANS, RD
OLMSTEAD, MA
UHRBERG, RIG
BACHRACH, RZ
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (07) : 523 - 525
[4] STABILITIES OF SINGLE-LAYER AND BILAYER STEPS ON SI(001) SURFACES
CHADI, DJ
[J]. PHYSICAL REVIEW LETTERS, 1987, 59 (15) : 1691 - 1694
[5] ANTIPHASE BOUNDARIES IN GAAS
CHO, NH
DECOOMAN, BC
CARTER, CB
FLETCHER, R
WAGNER, DK
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (08) : 879 - 881
[6] FAN JCC, 1986, MATERIALS RES SOC S, V67
[7] MATERIAL PROPERTIES OF HIGH-QUALITY GAAS EPITAXIAL LAYERS GROWN ON SI SUBSTRATES
FISCHER, R
MORKOC, H
NEUMANN, DA
ZABEL, H
CHOI, C
OTSUKA, N
LONGERBONE, M
ERICKSON, LP
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (05) : 1640 - 1647
[8] ANTIPHASE BOUNDARIES IN SEMICONDUCTING COMPOUNDS
HOLT, DB
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1969, 30 (06) : 1297 - &
[9] UHV-REM STUDY OF CHANGES IN THE STEP STRUCTURES ON CLEAN (100) SILICON SURFACES BY ANNEALING
INOUE, N
TANISHIRO, Y
YAGI, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (04): : L293 - L295
[10] MOLECULAR-BEAM EPITAXY OF CONTROLLED SINGLE DOMAIN GAAS ON SI (100)
KAWABE, M
UEDA, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (04): : L285 - L287