RUTHERFORD BACKSCATTERING AND TRANSMISSION ELECTRON-MICROSCOPY STUDY ON PHASE-TRANSFORMATION OF AS HEAVILY DOPED SI DURING POST-RAPID-THERMAL ANNEALING

被引：2

作者：

LU, ZH

机构：

来源：

关键词：

D O I：

10.1063/1.339853

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1756 / 1760

页数：5

共 14 条

[1]

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[2]

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[3]

CHU WK, 1979, UNPUB TOPICAL C LASE

[4] EFFECT OF COMPLEX-FORMATION ON DIFFUSION OF ARSENIC IN SILICON [J].

FAIR, RB ;

WEBER, GR .

[5]

FAIR RB, 1981, IMPURITY DOPING PROC, P364

[6]

LANNOO M, 1981, POINT DEFECTS SEMICO, V1, P193

[7]

LU ZH, 1985, PHYS STATUS SOLIDI A, V90, pK157, DOI 10.1002/pssa.2210900255

[8]

LU ZH, 1986, PHYS STATUS SOLIDI A, V98, P991

[9]

Lu Zhiheng, 1986, Chinese Journal of Semiconductors, V7, P480

NOBILI, D ;

CARABELAS, A ;

CELOTTI, G ;

SOLMI, S .