FACET FORMATION IN STRAINED SI1-XGEX FILMS

被引：92
|
作者：
LUTZ, MA [1 ]
FEENSTRA, RM [1 ]
MOONEY, PM [1 ]
TERSOFF, J [1 ]
CHU, JO [1 ]
机构：
[1] IBM CORP, DIV RES, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
来源：
SURFACE SCIENCE | 1994年 / 316卷 / 03期
关键词：
D O I：
10.1016/0039-6028(94)91208-4
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The surface morphology of epitaxial (001) Si1-xGex films, subject to biaxial strain, is studied by atomic force microscopy (AFM). Distinct facets are observed, oriented on {105}, {311}, and {518} crystal faces. The tiled arrangement of facets resembles a mosaic. We find that the growth sequence begins with the shallow {105} facets, followed by the appearance of steeper facets. After strain relaxation, the morphology coarsens and facets become less distinct. The existence of discrete facets produces a kinetic barrier to strain-induced roughening; and we show that increasing this barrier (by growing at reduced strain or reduced temperature) leads to a flatter surface morphology.
引用
收藏
页码：L1075 / L1080
页数：6
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