FACET FORMATION IN STRAINED SI1-XGEX FILMS

被引：92

作者：

LUTZ, MA ^{[1
]}

FEENSTRA, RM ^{[1
]}

MOONEY, PM ^{[1
]}

TERSOFF, J ^{[1
]}

CHU, JO ^{[1
]}

机构：

[1] IBM CORP, DIV RES, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA

来源：

SURFACE SCIENCE | 1994年 / 316卷 / 03期

关键词：

D O I：

10.1016/0039-6028(94)91208-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The surface morphology of epitaxial (001) Si1-xGex films, subject to biaxial strain, is studied by atomic force microscopy (AFM). Distinct facets are observed, oriented on {105}, {311}, and {518} crystal faces. The tiled arrangement of facets resembles a mosaic. We find that the growth sequence begins with the shallow {105} facets, followed by the appearance of steeper facets. After strain relaxation, the morphology coarsens and facets become less distinct. The existence of discrete facets produces a kinetic barrier to strain-induced roughening; and we show that increasing this barrier (by growing at reduced strain or reduced temperature) leads to a flatter surface morphology.

引用

页码：L1075 / L1080

页数：6

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