ON WAFER HIGH-FREQUENCY DEVICE CHARACTERIZATION

被引：7
作者：
KOOLEN, MCAM
机构：
[1] Philips Research laboratories, 5600 JA Eindhoven
来源：
MICROELECTRONIC ENGINEERING | 1992年 / 19卷 / 1-4期
关键词：
D O I：
10.1016/0167-9317(92)90521-R
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
As device size decreases and operation speed increases, the demands posed to the techniques for calibration and correction for high-frequency characterization of IC-components become more stringent. At the same time the importance of high-frequency characterization increases since device behavior can no longer be sufficiently well predicted using low-frequency measurements only. Small signal high-frequency measurements then provide extra information for device characterization.
引用
收藏
页码：679 / 686
页数：8
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