共 50 条
- [22] ENERGY OF FORMATION OF METAL VACANCIES IN GALLIUM-ARSENIDE AND INDIUM-ANTIMONIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (10): : 1344 - 1344
- [24] DISTRIBUTION AND DENSITY OF DISLOCATIONS IN BENT AND ANNEALED CRYSTALS OF GALLIUM ARSENIDE AND INDIUM ANTIMONIDE SOVIET PHYSICS CRYSTALLOGRAPHY, USSR, 1967, 11 (06): : 760 - &
- [25] PHASE EQUILIBRIUM IN GALLIUM ARSENIDE-INDIUM ARSENIDE SYSTEM RUSSIAN JOURNAL OF PHYSICAL CHEMISTRY,USSR, 1969, 43 (02): : 267 - &
- [26] Indium Phosphide, Indium-Gallium-Arsenide and Indium-Gallium-Antimonide based High Efficiency Multijunction Photovoltaics for Solar Energy Harvesting 2009 1ST ASIA SYMPOSIUM ON QUALITY ELECTRONIC DESIGN, 2009, : 237 - 241
- [30] ELECTRICAL PROPERTIES OF EPITAXIAL FILMS OF INDIUM ARSENIDE AND ANTIMONIDE SOVIET PHYSICS CRYSTALLOGRAPHY, USSR, 1969, 13 (04): : 580 - +